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| DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications. Features http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS * * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-75/SOT-416 Package Can be Soldered Using Wave or Reflow The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Available in 8 mm, 7 inch/3000 Unit Tape & Reel Pb-Free Packages are Available 3 Unit Vdc Vdc mAdc PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 2 1 SC-75/SOT-416 CASE 463 STYLE 1 xx M Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. xx = Specific Device Code M = Date Code THERMAL CHARACTERISTICS Rating Total Device Dissipation, FR-4 Board (Note 1) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) @ TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad (c) Semiconductor Components Industries, LLC, 2005 ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Symbol PD Value 200 1.6 Unit mW mW/C C/W RqJA PD 600 300 2.4 RqJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 1 January, 2005 - Rev. 6 Publication Order Number: DTC114EET1/D DTC114EET1 Series ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES Device DTC114EET1 DTC114EET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC144EET1G DTC114YET1 DTC114YET1G DTC114TET1 DTC114TET1G DTC143TET1 DTC143TET1G DTC123EET1 DTC123EET1G DTC143EET1 DTC143EET1G DTC143ZET1 DTC143ZET1G DTC124XET1 DTC124XET1G DTC123JET1 DTC123JET1G DTC115EET1 DTC115EET1G DTC144WET1 Marking 8A 8A 8B 8B 8C 8C 8D 8D 94 94 8F 8F 8H 8H 8J 8J 8K 8K 8L 8L 8M 8M 8N 8N 8P R1 (K) 10 10 22 22 47 47 10 10 10 10 4.7 4.7 2.2 2.2 4.7 4.7 4.7 4.7 22 22 2.2 2.2 100 100 47 R2 (K) 10 10 22 22 47 47 47 47 2.2 2.2 4.7 4.7 47 47 47 47 47 47 100 100 22 Package SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 SC-75/SOT-416 (Pb-Free) SC-75/SOT-416 3000 Tape & Reel Shipping For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 ICBO ICEO IEBO - - - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 - - nAdc nAdc mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 - 60 100 140 140 350 350 15 30 200 150 140 150 140 - - - - - - - - - - - - - - 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EET1 (IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/ DTC143EET1/DTC143ZET1/DTC124XET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) DTC114EET1 DTC124EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144EET1 DTC115EET1 DTC144WET1 VCE(sat) VOL - - - - - - - - - - - - - VOH 4.9 - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) DTC143TET1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143ZET1 DTC114TET1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc http://onsemi.com 3 DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Input Resistor TC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 DTC114EET1/DTC124EET1/DTC144EET1/ DTC115EET1 DTC114YET1 DTC143TET1/DTC114TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144WET1D 250 PD , POWER DISSIPATION (MILLIWATTS) 200 Symbol R1 Min 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 - 0.8 0.055 0.38 0.038 1.7 Typ 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 - 1.0 0.1 0.47 0.047 2.1 Max 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 - 1.2 0.185 0.56 0.056 2.6 Unit kW Resistor Ratio R1/R2 150 100 50 0 -50 RqJA = 600C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 2. Normalized Thermal Response http://onsemi.com 4 DTC114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 5 DTC114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC124EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage versus Output Current http://onsemi.com 6 DTC114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC144EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 15. Output Capacitance Figure 16. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage versus Output Current http://onsemi.com 7 DTC114EET1 Series TYPICAL ELECTRICAL CHARACTERISTICS - DTC114YET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C -25C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 18. VCE(sat) versus IC Figure 19. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C -25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 22. Input Voltage versus Output Current http://onsemi.com 8 DTC114EET1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 24. Open Collector Inverter: Inverts the Input Signal Figure 25. Inexpensive, Unregulated Current Source http://onsemi.com 9 DTC114EET1 Series PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE C -A- S 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC G -B- 1 D 3 PL 0.20 (0.008) M B K 0.20 (0.008) A J C L H STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.53 0.020 0.53 0.020 1.10 0.043 0.50 0.020 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 DTC114EET1/D |
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